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Intense ultraviolet photoluminescence at 314 nm in Gd^3+-doped Silica

He, Jing; Wang, Yun; Steigenberger, Sebastian; Macpherson, Alisdair; Chiodini, Norberto; Brambilla, Gilberto. 2016 Intense ultraviolet photoluminescence at 314 nm in Gd^3+-doped Silica. In: Conference on Lasers and Electro-Optics 2016, San Jose, US, 05-10 Jun 2016. JTh2A.86.

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Abstract/Summary

Photoluminescence (PL) of Gd-doped silica in the ultraviolet (UV) is investigated. The efficient emission detected at 314 nm is due to the 6P7/2 to 8S7/2 transition of a 4f electron of the Gd3+ ion.

Item Type: Publication - Conference Item (Paper)
Digital Object Identifier (DOI): 10.1364/CLEO_AT.2016.JTh2A.86
Date made live: 26 May 2017 11:04 +0 (UTC)
URI: https://nora.nerc.ac.uk/id/eprint/517090

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