Intense ultraviolet photoluminescence at 314 nm in Gd^3+-doped Silica
He, Jing; Wang, Yun; Steigenberger, Sebastian; Macpherson, Alisdair; Chiodini, Norberto; Brambilla, Gilberto. 2016 Intense ultraviolet photoluminescence at 314 nm in Gd^3+-doped Silica. In: Conference on Lasers and Electro-Optics 2016, San Jose, US, 05-10 Jun 2016. JTh2A.86.
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Official URL: http://dx.doi.org/10.1364/CLEO_AT.2016.JTh2A.86
Abstract/Summary
Photoluminescence (PL) of Gd-doped silica in the ultraviolet (UV) is investigated. The efficient emission detected at 314 nm is due to the 6P7/2 to 8S7/2 transition of a 4f electron of the Gd3+ ion.
Item Type: | Publication - Conference Item (Paper) |
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Digital Object Identifier (DOI): | 10.1364/CLEO_AT.2016.JTh2A.86 |
Date made live: | 26 May 2017 11:04 +0 (UTC) |
URI: | https://nora.nerc.ac.uk/id/eprint/517090 |
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